| Title | Analysis and Design of a SiGe BiCMOS PA for 6G FR3 Band With 29-dBm P SAT and 40.1% PAE |
| Publication Type | Journal Article |
| Year of Publication | 2025 |
| Authors | Pecile, D, Gambarucci, A, Kokorovic, S, Bevilacqua, A |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Pagination | 1-12 |
| Keywords | 5G mobile communication, 6G mobile communication, BiCMOS integrated circuits, Broadband amplifier, electrothermal simulations, FR3 band, handset amplifier, heterojunction bipolar transistor (HBT), Impedance, integrated transformers, Linearity, mobile communications, monolithic microwave integrated circuit (MMIC), new radio-unlicensed (NR-U), power amplifier (PA), power amplifiers, Power generation, SiGe BiCMOS, Silicon germanium, sixth generation (6G), Telephone sets, Topology |
| DOI | 10.1109/TMTT.2025.3588800 |