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A 5.1–10.5 GHz SiGe BiCMOS Power Amplifier for 6GNR with 29 dBm PSAT and 40.1% PAE

TitleA 5.1–10.5 GHz SiGe BiCMOS Power Amplifier for 6GNR with 29 dBm PSAT and 40.1% PAE
Publication TypeConference Paper
Year of Publication2025
AuthorsPecile, D, Kokorovic, S, Gambarucci, A, Bevilacqua, A
Conference Name2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Keywords5G, 5G mobile communication, 6G, 6G mobile communication, AAS, Bandwidth, BiCMOS integrated circuits, handset, MIMO, NR, PAE, power amplifier, power amplifiers, Radio frequency, RF PA, SiGe, Silicon germanium, stacked transistors, Telephone sets, Topology, transformers, transistors
DOI10.1109/SiRF63957.2025.11076751