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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

TitleGaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
Publication TypeConference Paper
Year of Publication2022
AuthorsChiocchetta, F, De Santi, C, Rampazzo, F, Mukherjee, K, Grünenpütt, J, Sommer, D, Blanck, H, Lambert, B, Gerosa, A, MENEGHESSO, G, Zanoni, E, Meneghini, M
Conference Name2022 IEEE International Reliability Physics Symposium (IRPS)
DOI10.1109/IRPS48227.2022.9764510