%0 Journal Article %J IEEE Journal of Solid-State Circuits %D 2016 %T A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2° Phase-Shift Variation %A Padovan, F. %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K Antenna radiation patterns %K Array signal processing %K compensation circuitry %K frequency 12 GHz %K Gain %K gain 22 dB %K gain control %K gain-control bipolar VGA %K Ge-Si alloys %K input-output phase shift sensitivity to gain variations %K linear-in-dB gain control feature %K Linear-in-decibel (linear-in-dB) gain control %K linear-in-decibel gain control %K microwave amplifiers %K noise figure 5.1 dB %K phase-shift compensation %K phased array %K phased array system %K Phased arrays %K power 83 mW %K semiconductor materials %K SiGe %K SiGe bipolar technology %K signal phase-amplitude control %K Silicon germanium %K ultra-low sidelobe phased arrays %K variable gain amplifier %K variable gain amplifier (VGA) %B IEEE Journal of Solid-State Circuits %V 51 %P 1525-1536 %8 July %G eng %R 10.1109/JSSC.2016.2551749 %0 Conference Paper %B ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference %D 2016 %T A 15.5-39GHz BiCMOS VGA with phase shift compensation for 5G mobile communication transceivers %A Padovan, F. %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K 5G mobile communication %K 5G mobile communication transceivers %K BiCMOS integrated circuits %K BiCMOS VGA %K Broadband amplifiers %K frequency 15.5 GHz to 39 GHz %K Frequency measurement %K Gain %K gain control %K Gain measurement %K inductors %K microwave integrated circuits %K phase shift compensation %K Phased arrays %K power 104 mW %K radio transceivers %K Wideband %B ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference %P 363-366 %8 Sept %R 10.1109/ESSCIRC.2016.7598317 %0 Conference Paper %B European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st %D 2015 %T A 12GHz 22dB-gain-control SiGe bipolar VGA with 2° phase shift variation %A Padovan, F. %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K bandwidth 10 GHz to 14.4 GHz %K frequency 12 GHz %K Gain %K gain 22 dB %K gain 9 dB to 13 dB %K gain control %K gain control SiGe bipolar VGA %K Gain measurement %K Ge-Si alloys %K microwave phase shifters %K Noise %K phase shift variation %K Phased arrays %K power 83 mW %K SiGe %K SiGe bipolar technology %K Silicon germanium %K transistors %K variable gain amplifier %B European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st %P 56-59 %8 Sept %R 10.1109/ESSCIRC.2015.7313827 %0 Journal Article %J IEEE Microwave and Wireless Components Letters %D 2014 %T An X-Band Lumped-Element Wilkinson Combiner With Embedded Impedance Transformation %A Caruso, M. %A Bevilacqua, A. %A Neviani, A. %K Frequency measurement %K Impedance %K Impedance transformation %K integrated power combiner/divider %K Loss measurement %K Phased arrays %K Ports (Computers) %K Power combiners %K Transmission line measurements %K Wilkinson combiner %B IEEE Microwave and Wireless Components Letters %V 24 %P 689-691 %8 Oct %R 10.1109/LMWC.2014.2344311