%0 Journal Article %J IEEE Journal of Solid-State Circuits %D 2015 %T A 40-67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP %A Bassi, M. %A Zhao, J. %A Bevilacqua, A. %A Ghilioni, A. %A Mazzanti, A. %A Svelto, F. %K Bandwidth %K Broadband amplifiers %K Capacitance %K CMOS integrated circuits %K coupled resonators %K gain-bandwidth product %K Impedance %K inductors %K millimeter wave integrated circuits %K power amplifiers %K Power generation %K resonator filters %B IEEE Journal of Solid-State Circuits %V 50 %P 1618-1628 %8 July %R 10.1109/JSSC.2015.2409295 %0 Conference Paper %B European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th %D 2014 %T A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP %A Junlei Zhao %A Bassi, M. %A Bevilacqua, A. %A Ghilioni, A. %A Mazzanti, A. %A Svelto, F. %K Bandwidth %K CMOS analogue integrated circuits %K CMOS integrated circuits %K CMOS LP %K differential amplifiers %K efficiency 16 percent %K field effect MIMIC %K frequency 40 GHz to 67 GHz %K Gain %K Impedance %K impedance matching %K inductors %K low-power devices %K low-power electronics %K millimetre wave power amplifiers %K millimetre wave resonators %K mm-wave PAs %K neutralized common source stages %K Norton transformations %K output matching networks %K PAE %K Power generation %K PSAT %K size 28 nm %K two-stage differential PA %K wideband amplifiers %K wideband inductively coupled resonators %K wideband power amplifiers %K wireless applications %B European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th %P 179-182 %8 Sept %R 10.1109/ESSCIRC.2014.6942051