%0 Conference Paper %B ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference %D 2017 %T A 21GHz 20.5%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset %A F. Boscolo %A Padovan, F. %A F. Quadrelli %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K BiCMOS integrated circuits %K bipolar MMIC %K current 17.5 mA %K frequency 1 MHz %K frequency 18.8 GHz to 23.1 GHz %K Ge-Si alloys %K microwave oscillators %K oscillator figure-of-merit %K phase noise %K SiGe %K SiGe BiCMOS Colpitts VCO %K Silicon germanium %K transformer-coupled varactor %K Tuning %K Varactors %K very low phase noise %K voltage 4 V %K voltage controlled oscillator %K voltage-controlled oscillators %B ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference %P 91-94 %8 Sept %R 10.1109/ESSCIRC.2017.8094533 %0 Journal Article %J IEEE Journal of Solid-State Circuits %D 2016 %T A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2° Phase-Shift Variation %A Padovan, F. %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K Antenna radiation patterns %K Array signal processing %K compensation circuitry %K frequency 12 GHz %K Gain %K gain 22 dB %K gain control %K gain-control bipolar VGA %K Ge-Si alloys %K input-output phase shift sensitivity to gain variations %K linear-in-dB gain control feature %K Linear-in-decibel (linear-in-dB) gain control %K linear-in-decibel gain control %K microwave amplifiers %K noise figure 5.1 dB %K phase-shift compensation %K phased array %K phased array system %K Phased arrays %K power 83 mW %K semiconductor materials %K SiGe %K SiGe bipolar technology %K signal phase-amplitude control %K Silicon germanium %K ultra-low sidelobe phased arrays %K variable gain amplifier %K variable gain amplifier (VGA) %B IEEE Journal of Solid-State Circuits %V 51 %P 1525-1536 %8 July %G eng %R 10.1109/JSSC.2016.2551749 %0 Conference Paper %B European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st %D 2015 %T A 12GHz 22dB-gain-control SiGe bipolar VGA with 2° phase shift variation %A Padovan, F. %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K bandwidth 10 GHz to 14.4 GHz %K frequency 12 GHz %K Gain %K gain 22 dB %K gain 9 dB to 13 dB %K gain control %K gain control SiGe bipolar VGA %K Gain measurement %K Ge-Si alloys %K microwave phase shifters %K Noise %K phase shift variation %K Phased arrays %K power 83 mW %K SiGe %K SiGe bipolar technology %K Silicon germanium %K transistors %K variable gain amplifier %B European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st %P 56-59 %8 Sept %R 10.1109/ESSCIRC.2015.7313827 %0 Conference Paper %B 2015 Asia-Pacific Microwave Conference (APMC) %D 2015 %T SiGe BiCMOS VCO with 27% tuning range for 5G communications %A Padovan, F. %A Tiebout, M. %A F. Dielacher %A Bevilacqua, A. %A Neviani, A. %K 5G communications %K 5G mobile communication %K BiCMOS integrated circuits %K BiCMOS VCO %K current 8 mA %K frequency 12 GHz to 15.9 GHz %K Frequency measurement %K Ge-Si alloys %K Heterojunction bipolar transistors %K microwave oscillators %K oscillator core %K phase noise %K SiGe %K Silicon germanium %K transformer-coupled varactor %K Tuning %K Varactors %K voltage 3.3 V %K voltage-controlled oscillators %B 2015 Asia-Pacific Microwave Conference (APMC) %V 1 %P 1-3 %8 Dec %R 10.1109/APMC.2015.7411748 %0 Conference Paper %B Proceedings of the 2012 ESSCIRC %D 2012 %T A SiGe bipolar VCO for backhaul E-band communication systems %A Padovan, F. %A Tiebout, M. %A Mertens, K. %A Bevilacqua, A. %A Neviani, A. %K backhaul E-band communication system %K bipolar integrated circuits %K frequency 18.9 GHz to 22.1 GHz %K Frequency measurement %K frequency multiplier %K Ge-Si alloys %K K-band %K K-band SiGe bipolar VCO %K microwave oscillators %K phase noise %K SiGe %K Silicon germanium %K Tuning %K voltage-controlled oscillators %B Proceedings of the 2012 ESSCIRC %P 402 -405 %8 Sept. %R 10.1109/ESSCIRC.2012.6341279