%0 Conference Paper %B European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st %D 2015 %T A 12GHz 22dB-gain-control SiGe bipolar VGA with 2° phase shift variation %A Padovan, F. %A Tiebout, M. %A Neviani, A. %A Bevilacqua, A. %K bandwidth 10 GHz to 14.4 GHz %K frequency 12 GHz %K Gain %K gain 22 dB %K gain 9 dB to 13 dB %K gain control %K gain control SiGe bipolar VGA %K Gain measurement %K Ge-Si alloys %K microwave phase shifters %K Noise %K phase shift variation %K Phased arrays %K power 83 mW %K SiGe %K SiGe bipolar technology %K Silicon germanium %K transistors %K variable gain amplifier %B European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st %P 56-59 %8 Sept %R 10.1109/ESSCIRC.2015.7313827