@conference {8094533, title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset}, booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference}, year = {2017}, month = {Sept}, pages = {91-94}, keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators}, doi = {10.1109/ESSCIRC.2017.8094533}, author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.} } @conference {7411748, title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications}, booktitle = {2015 Asia-Pacific Microwave Conference (APMC)}, volume = {1}, year = {2015}, month = {Dec}, pages = {1-3}, keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators}, doi = {10.1109/APMC.2015.7411748}, author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.} } @conference {6942078, title = {A 20Mb/s, 2.76 pJ/b UWB impulse radio TX with 11.7\% efficiency in 130 nm CMOS}, booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th}, year = {2014}, month = {Sept}, pages = {287-290}, keywords = {antenna, Antennas, Bandwidth, bit rate 20 Mbit/s, CMOS integrated circuits, CMOS technology, digitally controlled oscillator, efficiency 11.7 percent, energy conservation, frequency 7.25 GHz to 8.5 GHz, low-voltage supply, microwave antennas, microwave oscillators, operation efficiency, oscillators, overall energy efficiency, PPM-modulated pulses, radio transmitters, size 130 nm, supporting communication ranges, ultra wideband communication, ultralow energy neural recording applications, UWB impulse radio transmitter, UWB impulse radio TX, voltage 0.5 V, Wireless communication}, issn = {1930-8833}, doi = {10.1109/ESSCIRC.2014.6942078}, author = {Padovan, F. and Bevilacqua, A. and Neviani, A.} } @conference {6341279, title = {A SiGe bipolar VCO for backhaul E-band communication systems}, booktitle = {Proceedings of the 2012 ESSCIRC}, year = {2012}, month = {Sept.}, pages = {402 -405}, keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators}, issn = {1930-8833}, doi = {10.1109/ESSCIRC.2012.6341279}, author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.} } @conference {5326029, title = {A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS}, booktitle = {Proceedings of ESSCIRC 2009}, year = {2009}, pages = {444 -447}, keywords = {cellular radio, CMOS, CMOS integrated circuits, current 9 mA, divide-by-four injection-locked frequency divider, frequency 13 GHz to 15 GHz, frequency 3 MHz, frequency dividers, GSM-compliant local oscillator, LC VCO, microwave oscillators, power 10.8 mW, ring oscillator-based topology, size 65 nm, thin-oxide devices, voltage 1.2 V, voltage-controlled oscillators}, issn = {1930-8833}, doi = {10.1109/ESSCIRC.2009.5326029}, author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Da Dalt, N. and Gerosa, A. and Neviani, A.} } @article {4155051, title = {Transformer-Based Dual-Mode Voltage-Controlled Oscillators}, journal = {IEEE Transactions on Circuits and Systems II: Express Briefs}, volume = {54}, number = {4}, year = {2007}, pages = {293 -297}, keywords = {0.13 micron, 1 to 8 mW, 2.5D electromagnetic simulation, 3.6 to 7.8 GHz, Agilent Momentum, CMOS digital integrated circuits, digital CMOS technology, dual-mode voltage-controlled oscillators, frequency tuning techniques, microwave oscillators, MMIC oscillators, one-port network, quality factor, reconfigurable architectures, resonators, transformer-based resonator, transformers, two-port network, VCO, voltage-controlled oscillators, wide-band voltage-controlled oscillator}, issn = {1549-7747}, doi = {10.1109/TCSII.2006.889734}, author = {Bevilacqua, A. and Pavan, F.P. and Sandner, C. and Gerosa, A. and Neviani, A.} }