@conference {8094533, title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset}, booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference}, year = {2017}, month = {Sept}, pages = {91-94}, keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators}, doi = {10.1109/ESSCIRC.2017.8094533}, author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.} } @conference {7411748, title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications}, booktitle = {2015 Asia-Pacific Microwave Conference (APMC)}, volume = {1}, year = {2015}, month = {Dec}, pages = {1-3}, keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators}, doi = {10.1109/APMC.2015.7411748}, author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.} }