@conference {7870346, title = {A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35\% PAE}, booktitle = {2017 IEEE International Solid-State Circuits Conference (ISSCC)}, year = {2017}, month = {Feb}, pages = {232-233}, keywords = {capacitors, Frequency measurement, power amplifiers, Power generation, Power measurement, Switches, Wireless communication}, doi = {10.1109/ISSCC.2017.7870346}, author = {Passamani, A and Ponton, D. and E. Thaller and Knoblinger, G. and Neviani, A. and Bevilacqua, A.} } @article {375, title = {Analysis and design of power and efficiency in third-order matching networks for switched-capacitor power-amplifiers}, journal = {Analog Integrated Circuits and Signal Processing}, volume = {89}, year = {2016}, pages = {307-315}, author = {Passamani, A and Ponton, D. and Knoblinger, G. and Bevilacqua, A.} } @conference {7364367, title = {Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs}, booktitle = {Nordic Circuits and Systems Conference (NORCAS): NORCHIP International Symposium on System-on-Chip (SoC), 2015}, year = {2015}, month = {Oct}, pages = {1-4}, keywords = {Bluetooth, Capacitance, circuit optimisation, circuit simulations, CMOS analogue integrated circuits, CMOS RF metal stack, frequency 2.4 GHz, integrated circuit design, Integrated circuit modeling, Manganese, power amplifiers, Power generation, Radio frequency, Resistance, size 28 nm, switched capacitor networks, switched capacitor power amplifier, switched-capacitor PA, Switches, third-order matching network, voltage 1.1 V}, doi = {10.1109/NORCHIP.2015.7364367}, author = {Passamani, A and Ponton, D. and Knoblinger, G. and Bevilacqua, A.} } @conference {6872748, title = {A linear model of efficiency for Switched-Capacitor RF Power-Amplifiers}, booktitle = {2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, year = {2014}, month = {June}, pages = {1-4}, keywords = {back-of-the-envelope equations, C-DAC, CMOS analogue integrated circuits, CMOS integrated circuits, DPA, efficiency, Equations, Integrated circuit modeling, intrinsic power, linear model, low-power CMOS technology, Mathematical model, output stage inverter, PA, power, Radio frequency, radio-frequency switched-capacitor power amplifiers, radiofrequency power amplifiers, RF-DAC, SCPA, Semiconductor device modeling, size 28 nm, SpectreRF simulations, switched capacitor networks, Switches, target output power}, doi = {10.1109/PRIME.2014.6872748}, author = {Passamani, A and Ponton, D. and Knoblinger, G. and Bevilacqua, A.} }