You are here
Biblio
C
F. Chiocchetta, De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, J., Sommer, D., Blanck, H., Lambert, B., Gerosa, A., MENEGHESSO, G., Zanoni, E., and Meneghini, M.,
“GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse”, in
2022 IEEE International Reliability Physics Symposium (IRPS), 2022.