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Filters: Keyword is Ge-Si alloys and Author is Padovan, F. [Clear All Filters]

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F. Padovan, Tiebout, M., Neviani, A., and Bevilacqua, A., “A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2° Phase-Shift Variation”, IEEE Journal of Solid-State Circuits, vol. 51, pp. 1525-1536, 2016.

F. Padovan, Tiebout, M., Dielacher, F., Bevilacqua, A., and Neviani, A., “SiGe BiCMOS VCO with 27% tuning range for 5G communications”, in 2015 Asia-Pacific Microwave Conference (APMC), 2015, vol. 1, pp. 1-3.

F. Padovan, Tiebout, M., Neviani, A., and Bevilacqua, A., “A 12GHz 22dB-gain-control SiGe bipolar VGA with 2° phase shift variation”, in European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st, 2015, pp. 56-59.

F. Padovan, Tiebout, M., Mertens, K., Bevilacqua, A., and Neviani, A., “A SiGe bipolar VCO for backhaul E-band communication systems”, in Proceedings of the 2012 ESSCIRC, 2012, pp. 402 -405.