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Integrated Circuits for Analog and RF µ-Systems
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B
M. Bassi
,
Zhao, J.
,
Bevilacqua, A.
,
Ghilioni, A.
,
Mazzanti, A.
, and
Svelto, F.
,
“
A 40-67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP
”
,
IEEE Journal of Solid-State Circuits
, vol. 50, pp. 1618-1628, 2015.
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G
A. Gatti
,
Spiazzi, G.
,
Gerosa, A.
,
Neviani, A.
, and
Bevilacqua, A.
,
“
A 130-nm CMOS Dual Input-Polarity DC–DC Converter for Low-Power Applications
”
,
IEEE Solid-State Circuits Letters
, vol. 2, pp. 211-214, 2019.
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P
A. Passamani
,
Ponton, D.
,
Thaller, E.
,
Knoblinger, G.
,
Neviani, A.
, and
Bevilacqua, A.
,
“
A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE
”
, in
2017 IEEE International Solid-State Circuits Conference (ISSCC)
, 2017, pp. 232-233.
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A. Passamani
,
Ponton, D.
,
Knoblinger, G.
, and
Bevilacqua, A.
,
“
Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs
”
, in
Nordic Circuits and Systems Conference (NORCAS): NORCHIP International Symposium on System-on-Chip (SoC), 2015
, 2015, pp. 1-4.
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A. Passamani
,
Ponton, D.
,
Wolter, A.
,
Knoblinger, G.
, and
Bevilacqua, A.
,
“
A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm2 Area w/ 2D Digital-Pre-Distortion and Package Combiner
”
, in
2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
, 2018.
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S
P. Scaramuzza
,
Rubino, C.
,
Tiebout, M.
,
Caruso, M.
,
Ortner, M.
,
Neviani, A.
, and
Bevilacqua, A.
,
“
Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems
”
, in
ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference
, 2017, pp. 187-190.
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Z
J. Zhao
,
Bassi, M.
,
Bevilacqua, A.
,
Ghilioni, A.
,
Mazzanti, A.
, and
Svelto, F.
,
“
A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP
”
, in
European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th
, 2014, pp. 179-182.
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Recent Publications
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
A Fractional-N Bang-Bang PLL Based on Type-II Gear Shifting and Adaptive Frequency Switching Achieving 68.6 fs-rms-Total-Integrated-Jitter and 1.56 μ s-Locking-Time
Galvanic-Coupled Trans-Dural Data Transfer for High-Bandwidth Intracortical Neural Sensing
A 24 GHz Quadrature VCO Based on Coupled PLL with -134 dBc/Hz Phase Noise at 10 MHz Offset in 28 nm CMOS
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