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Biblio
C
N. Modolo, De Santi, C., Baratella, G., Bettini, A., Borga, M., Posthuma, N., Bakeroot, B., You, S., Decoutere, S., Bevilacqua, A., Neviani, A., MENEGHESSO, G., Zanoni, E., and Meneghini, M.,
“Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices”,
IEEE Transactions on Electron Devices, pp. 1-6, 2022.
G
F. Chiocchetta, De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, J., Sommer, D., Blanck, H., Lambert, B., Gerosa, A., MENEGHESSO, G., Zanoni, E., and Meneghini, M.,
“GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse”, in
2022 IEEE International Reliability Physics Symposium (IRPS), 2022.