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Conference Paper

F. Chiocchetta, De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, J., Sommer, D., Blanck, H., Lambert, B., Gerosa, A., MENEGHESSO, G., Zanoni, E., and Meneghini, M., “GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse”, in 2022 IEEE International Reliability Physics Symposium (IRPS), 2022.

Journal Article

N. Modolo, De Santi, C., Baratella, G., Bettini, A., Borga, M., Posthuma, N., Bakeroot, B., You, S., Decoutere, S., Bevilacqua, A., Neviani, A., MENEGHESSO, G., Zanoni, E., and Meneghini, M., “Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices”, IEEE Transactions on Electron Devices, pp. 1-6, 2022.

G. MENEGHESSO, Zanoni, E., Gerosa, A., PAVAN, P., STADLER, W., ESMARK, K., and GUGGENMOS, G., “Test structures and testing methods for electrostatic discharge: results of PROPHECY project”, MICROELECTRONICS RELIABILITY, vol. 39, pp. 635–646, 1999.