@conference {519,
	title = {A 114-126 GHz Frequency Quintupler with >36 dBc Harmonic Rejection in 0.13 μm SiGe BiCMOS},
	booktitle = {2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)},
	year = {2019},
	month = {Nov},
	keywords = {D band, frequency multiplier, radar, SiGe},
	doi = {10.1109/BCICTS45179.2019.8972769},
	author = {A. Bilato and V. Issakov and Bevilacqua, A.}
}
@article {511,
	title = {A 39-GHz Frequency Tripler With >40-dBc Harmonic Rejection for 5G Communication Systems in 28-nm Bulk CMOS},
	journal = {IEEE Solid-State Circuits Letters},
	volume = {2},
	year = {2019},
	month = {Sep.},
	pages = {107-110},
	keywords = {5G communication systems, 5G mobile communication, Bandwidth, BiCMOS technologies, bulk CMOS technology, carrier signal generation, CMOS, CMOS analogue integrated circuits, communication systems, edge-combining concept, field effect MMIC, fifth generation (5G), frequency 39 GHz, Frequency conversion, Frequency measurement, frequency multiplier, frequency multipliers, frequency tripler, Harmonic analysis, harmonic rejection, harmonics suppression, high harmonic rejection ratio, injection locked oscillators, low phase noise, low spur level, mm-waves, MMIC frequency convertors, multipoint injection-locked ring oscillator, phase noise, power 25.0 mW, radar, Ring oscillators, robust rejection ratio, single-stage polyphase filter, size 28 nm, tripler, V, voltage 0.9 V},
	issn = {2573-9603},
	doi = {10.1109/LSSC.2019.2930198},
	author = {M. Bassi and G. Boi and F. Padovan and J. Fritzin and S. Di Martino and D. Knauder and Bevilacqua, A.}
}
@conference {6341279,
	title = {A SiGe bipolar VCO for backhaul E-band communication systems},
	booktitle = {Proceedings of the 2012 ESSCIRC},
	year = {2012},
	month = {Sept.},
	pages = {402 -405},
	keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2012.6341279},
	author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.}
}
