@article {514,
	title = {A 130-nm CMOS Dual Input-Polarity DC{\textendash}DC Converter for Low-Power Applications},
	journal = {IEEE Solid-State Circuits Letters},
	volume = {2},
	year = {2019},
	month = {Sep.},
	pages = {211-214},
	keywords = {capacitors, CMOS dual input-polarity DC-DC converter, CMOS integrated circuits, DC-DC power convertors, dc{\textendash}dc converters, dual polarity, inductors, Internet-of-Things (IoT), Logic gates, low power, low-power applications, off-chip components, power 6.0 mW, power capacitors, Power generation, power inductor, power inductors, standard boost converter, Standards, transistors, voltage 1.2 V, voltage 60.0 mV, Voltage control},
	issn = {2573-9603},
	doi = {10.1109/LSSC.2019.2932850},
	author = {A. Gatti and G. Spiazzi and A. Gerosa and A. Neviani and Bevilacqua, A.}
}
@article {5492325,
	title = {A 0.06 mm2 11 mW Local Oscillator for the GSM Standard in 65 nm CMOS},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {45},
	number = {7},
	year = {2010},
	pages = {1295 -1304},
	keywords = {cellular radio, CMOS integrated circuits, CMOS process, current 9 mA, divide-by-four injection-locked frequency divider, frequency 13 GHz to 15 GHz, frequency 3 MHz, frequency dividers, GSM standard, LC VCO, local oscillator, MMIC oscillators, network topology, ring oscillator-based topology, size 65 nm, thin-oxide devices, voltage 1.2 V, voltage-controlled oscillators},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2010.2049457},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Da Dalt, N. and Gerosa, A. and Neviani, A.}
}
@conference {5619867,
	title = {A 4.1 to 5.1 GHz 430 uA injection-locked frequency divider by 7 in 65 nm CMOS},
	booktitle = {Proceedings of the ESSCIRC 2010},
	year = {2010},
	pages = {150 -153},
	keywords = {CMOS, CMOS integrated circuits, current 430 muA, digital clocking, direct injection locking, frequency 4.1 GHz to 5.1 GHz, frequency dividers, injection locked oscillators, injection-locked frequency divider, output phase noise, phase noise, ring oscillator, size 65 nm, voltage 1.2 V},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2010.5619867},
	author = {Bevilacqua, A. and Lorenzon, L. and Da Dalt, N. and Gerosa, A. and Neviani, A.}
}
@conference {5326029,
	title = {A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS},
	booktitle = {Proceedings of ESSCIRC 2009},
	year = {2009},
	pages = {444 -447},
	keywords = {cellular radio, CMOS, CMOS integrated circuits, current 9 mA, divide-by-four injection-locked frequency divider, frequency 13 GHz to 15 GHz, frequency 3 MHz, frequency dividers, GSM-compliant local oscillator, LC VCO, microwave oscillators, power 10.8 mW, ring oscillator-based topology, size 65 nm, thin-oxide devices, voltage 1.2 V, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2009.5326029},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Da Dalt, N. and Gerosa, A. and Neviani, A.}
}
@article {4684636,
	title = {A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {43},
	number = {12},
	year = {2008},
	pages = {2693 -2705},
	keywords = {4-port oscillator, CMOS digital integrated circuits, compact wideband front-end, digital CMOS, downconversion, frequency 10 GHz, frequency 3.5 GHz, frequency synthesis, inductorless LNA, inductors, low noise amplifiers, MMIC oscillators, RF front-end design, single-inductor dual-band VCO, size 90 nm, voltage 1.2 V, voltage-controlled oscillators},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2008.2004865},
	author = {Borremans, J. and Bevilacqua, A. and Bronckers, S. and Dehan, M. and Kuijk, M. and Wambacq, P. and Craninckx, J.}
}
@article {4684650,
	title = {UWB Fast-Hopping Frequency Generation Based on Sub-Harmonic Injection Locking},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {43},
	number = {12},
	year = {2008},
	pages = {2844 -2852},
	keywords = {CMOS integrated circuits, CMOS prototype synthesizes, current 30 mA, fast hopping carriers, frequency 8.71 GHz, frequency hop communication, frequency synthesizers, size 90 nm, sub harmonic injection locking, ultra wideband communication, UWB fast hopping frequency generation, voltage 1.2 V, WiMedia},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2008.2005702},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Marsili, S. and Sandner, C. and Gerosa, A. and Neviani, A.}
}
@conference {4263311,
	title = {A low-voltage III-order log-domain filter in standard CMOS technology with tunable frequency},
	booktitle = {13th IEEE International Conference on Electronics, Circuits and Systems, 2006. ICECS {\textquoteright}06. },
	year = {2006},
	pages = {90 -93},
	keywords = {bandwidth 14 kHz to 150 kHz, circuit tuning, class AB operation filter, CMOS analogue integrated circuits, CMOS process, CMOS technology, low-pass filter, low-pass filters, low-power electronics, low-voltage filter, parasitic capacitances effect, size 0.8 mum, third-order log-domain filter, tunable frequency, voltage 1.2 V},
	doi = {10.1109/ICECS.2006.379708},
	author = {Maniero, A. and Bevilacqua, A. and Gerosa, A. and Neviani, A.}
}
