@conference {700,
	title = {A 5.1{\textendash}10.5 GHz SiGe BiCMOS Power Amplifier for 6GNR with 29 dBm PSAT and 40.1\% PAE},
	booktitle = {2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)},
	year = {2025},
	keywords = {5G, 5G mobile communication, 6G, 6G mobile communication, AAS, Bandwidth, BiCMOS integrated circuits, handset, MIMO, NR, PAE, power amplifier, power amplifiers, Radio frequency, RF PA, SiGe, Silicon germanium, stacked transistors, Telephone sets, Topology, transformers, transistors},
	doi = {10.1109/SiRF63957.2025.11076751},
	author = {Pecile, Davide and Kokorovic, Stefan and Gambarucci, Alberto and Bevilacqua, A.}
}
@conference {488,
	title = {A 18.2-29.3 GHz Colpitts VCOs bank with -119.5 dBc/Hz Phase Noise at 1 MHz Offset for 5G Communications},
	booktitle = {2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)},
	year = {2019},
	month = {June},
	keywords = {5G, BiCMOS, BiCMOS integrated circuits, Colpitts, phase noise, Silicon germanium, Topology, Tuning, Varactors, voltage controlled oscillators},
	author = {F. Quadrelli and F. Panazzolo and M. Tiebout and F. Padovan and M. Bassi and Bevilacqua, A.}
}
