@article {707,
	title = {Analysis and Design of a SiGe BiCMOS PA for 6G FR3 Band With 29-dBm P SAT and 40.1\% PAE},
	journal = {IEEE Transactions on Microwave Theory and Techniques},
	year = {2025},
	pages = {1-12},
	keywords = {5G mobile communication, 6G mobile communication, BiCMOS integrated circuits, Broadband amplifier, electrothermal simulations, FR3 band, handset amplifier, heterojunction bipolar transistor (HBT), Impedance, integrated transformers, Linearity, mobile communications, monolithic microwave integrated circuit (MMIC), new radio-unlicensed (NR-U), power amplifier (PA), power amplifiers, Power generation, SiGe BiCMOS, Silicon germanium, sixth generation (6G), Telephone sets, Topology},
	doi = {10.1109/TMTT.2025.3588800},
	author = {Pecile, Davide and Gambarucci, Alberto and Kokorovic, Stefan and Bevilacqua, A.}
}
@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
