@article {704,
	title = {A 0.7 V Multi-Class Digital Doherty Power Amplifier for BLE Applications With 41\% Peak DE in 22 nm CMOS},
	journal = {IEEE Solid-State Circuits Letters},
	volume = {8},
	year = {2025},
	pages = {217 - 220},
	chapter = {217},
	keywords = {BLE, BT, Clocks, CMOS, Computer architecture, delays, Digital Doherty PA, Impedance, Microprocessors, Modulation, multi-class PA, power amplifiers, Power generation, SCPA, transmitters, uneven Doherty, Voltage},
	doi = {10.1109/LSSC.2025.3591570},
	author = {Fietta, Edoardo Baiesi and Seebacher, David and Ponton, Davide and Bevilacqua, A.}
}
@article {707,
	title = {Analysis and Design of a SiGe BiCMOS PA for 6G FR3 Band With 29-dBm P SAT and 40.1\% PAE},
	journal = {IEEE Transactions on Microwave Theory and Techniques},
	year = {2025},
	pages = {1-12},
	keywords = {5G mobile communication, 6G mobile communication, BiCMOS integrated circuits, Broadband amplifier, electrothermal simulations, FR3 band, handset amplifier, heterojunction bipolar transistor (HBT), Impedance, integrated transformers, Linearity, mobile communications, monolithic microwave integrated circuit (MMIC), new radio-unlicensed (NR-U), power amplifier (PA), power amplifiers, Power generation, SiGe BiCMOS, Silicon germanium, sixth generation (6G), Telephone sets, Topology},
	doi = {10.1109/TMTT.2025.3588800},
	author = {Pecile, Davide and Gambarucci, Alberto and Kokorovic, Stefan and Bevilacqua, A.}
}
@conference {717,
	title = {Analysis of a Three-Way Voltage-Mode Digital Doherty Power Amplifier for Bluetooth Applications},
	booktitle = {2025 20th International Conference on PhD Research in Microelectronics and Electronics (PRIME)},
	year = {2025},
	keywords = {Bluetooth, CMOS integrated circuits, CMOS technology, power amplifiers, power combining, Power generation, Radio frequency, RF DAC, Switched-capacitor power amplifier (SCPA), Switching circuits, system-on-chip, Three-Way Doherty, Topology, transformers, Voltage},
	doi = {10.1109/PRIME66228.2025.11203334},
	author = {Fietta, Edoardo Baiesi and Seebacher, David and Ponton, Davide and Bevilacqua, A.}
}
@article {697,
	title = {Efficiency Optimization of Voltage-Mode CMOS Digital Doherty Power Amplifiers},
	journal = {IEEE Transactions on Very Large Scale Integration (VLSI) Systems},
	year = {2025},
	pages = {1-9},
	keywords = {asymmetric Doherty, CMOS integrated circuits, Integrated circuit modeling, Modulation, Optimization, power amplifiers, power combining, Power generation, Resistance, RF DAC, series combining transformer (SCT), Switched-capacitor power amplifier (SCPA), Switching circuits, transformers, transistors, Very large scale integration},
	doi = {10.1109/TVLSI.2025.3583797},
	author = {Baiesi Fietta, Edoardo and Seebacher, David and Ponton, Davide and Bevilacqua, A.}
}
@conference {695,
	title = {On the Efficiency Enhancement of Voltage Mode Digital Doherty Power Amplifiers},
	booktitle = {2024 IEEE Nordic Circuits and Systems Conference (NorCAS)},
	year = {2024},
	keywords = {Analytical models, asymmetric Doherty, Circuits and systems, CMOS integrated circuits, CMOS technology, Integrated circuits, power amplifiers, power combining, Power generation, RF DAC, Semiconductor device modeling, Switched-capacitor power amplifier (SCPA), Switches, Switching circuits},
	doi = {10.1109/NorCAS64408.2024.10752466},
	author = {Fietta, Edoardo Baiesi and Seebacher, David and Ponton, Davide and Bevilacqua, A.}
}
@article {514,
	title = {A 130-nm CMOS Dual Input-Polarity DC{\textendash}DC Converter for Low-Power Applications},
	journal = {IEEE Solid-State Circuits Letters},
	volume = {2},
	year = {2019},
	month = {Sep.},
	pages = {211-214},
	keywords = {capacitors, CMOS dual input-polarity DC-DC converter, CMOS integrated circuits, DC-DC power convertors, dc{\textendash}dc converters, dual polarity, inductors, Internet-of-Things (IoT), Logic gates, low power, low-power applications, off-chip components, power 6.0 mW, power capacitors, Power generation, power inductor, power inductors, standard boost converter, Standards, transistors, voltage 1.2 V, voltage 60.0 mV, Voltage control},
	issn = {2573-9603},
	doi = {10.1109/LSSC.2019.2932850},
	author = {A. Gatti and G. Spiazzi and A. Gerosa and A. Neviani and Bevilacqua, A.}
}
@conference {484,
	title = {A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm2 Area w/ 2D Digital-Pre-Distortion and Package Combiner},
	booktitle = {2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)},
	year = {2018},
	month = {Dec},
	keywords = {Area, CMOS technology, Combiner-in-Package, DAT, DPA, DPD, efficiency, EVM, power, power amplifier, power amplifiers, Power Combiner, Power combiners, Power generation, Power measurement, Pre-Distortion, System-in-Package, WIFI, Windings, Wireless, Wireless fidelity},
	doi = {10.1109/ICECS.2018.8617936},
	author = {A. Passamani and D. Ponton and A. Wolter and G. Knoblinger and Bevilacqua, A.}
}
@conference {7870346,
	title = {A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35\% PAE},
	booktitle = {2017 IEEE International Solid-State Circuits Conference (ISSCC)},
	year = {2017},
	month = {Feb},
	pages = {232-233},
	keywords = {capacitors, Frequency measurement, power amplifiers, Power generation, Power measurement, Switches, Wireless communication},
	doi = {10.1109/ISSCC.2017.7870346},
	author = {Passamani, A and Ponton, D. and E. Thaller and Knoblinger, G. and Neviani, A. and Bevilacqua, A.}
}
@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
@article {7065334,
	title = {A 40-67 GHz Power Amplifier With 13 dBm PSAT and 16\% PAE in 28 nm CMOS LP},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {50},
	number = {7},
	year = {2015},
	month = {July},
	pages = {1618-1628},
	keywords = {Bandwidth, Broadband amplifiers, Capacitance, CMOS integrated circuits, coupled resonators, gain-bandwidth product, Impedance, inductors, millimeter wave integrated circuits, power amplifiers, Power generation, resonator filters},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2015.2409295},
	author = {Bassi, M. and Zhao, J. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}
}
@conference {7364367,
	title = {Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs},
	booktitle = {Nordic Circuits and Systems Conference (NORCAS): NORCHIP International Symposium on System-on-Chip (SoC), 2015},
	year = {2015},
	month = {Oct},
	pages = {1-4},
	keywords = {Bluetooth, Capacitance, circuit optimisation, circuit simulations, CMOS analogue integrated circuits, CMOS RF metal stack, frequency 2.4 GHz, integrated circuit design, Integrated circuit modeling, Manganese, power amplifiers, Power generation, Radio frequency, Resistance, size 28 nm, switched capacitor networks, switched capacitor power amplifier, switched-capacitor PA, Switches, third-order matching network, voltage 1.1 V},
	doi = {10.1109/NORCHIP.2015.7364367},
	author = {Passamani, A and Ponton, D. and Knoblinger, G. and Bevilacqua, A.}
}
@conference {6942051,
	title = {A 40-67GHz power amplifier with 13dBm PSAT and 16\% PAE in 28 nm CMOS LP},
	booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th},
	year = {2014},
	month = {Sept},
	pages = {179-182},
	keywords = {Bandwidth, CMOS analogue integrated circuits, CMOS integrated circuits, CMOS LP, differential amplifiers, efficiency 16 percent, field effect MIMIC, frequency 40 GHz to 67 GHz, Gain, Impedance, impedance matching, inductors, low-power devices, low-power electronics, millimetre wave power amplifiers, millimetre wave resonators, mm-wave PAs, neutralized common source stages, Norton transformations, output matching networks, PAE, Power generation, PSAT, size 28 nm, two-stage differential PA, wideband amplifiers, wideband inductively coupled resonators, wideband power amplifiers, wireless applications},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2014.6942051},
	author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}
}
