@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7598317,
	title = {A 15.5-39GHz BiCMOS VGA with phase shift compensation for 5G mobile communication transceivers},
	booktitle = {ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference},
	year = {2016},
	month = {Sept},
	pages = {363-366},
	keywords = {5G mobile communication, 5G mobile communication transceivers, BiCMOS integrated circuits, BiCMOS VGA, Broadband amplifiers, frequency 15.5 GHz to 39 GHz, Frequency measurement, Gain, gain control, Gain measurement, inductors, microwave integrated circuits, phase shift compensation, Phased arrays, power 104 mW, radio transceivers, Wideband},
	doi = {10.1109/ESSCIRC.2016.7598317},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7313827,
	title = {A 12GHz 22dB-gain-control SiGe bipolar VGA with 2{\textdegree} phase shift variation},
	booktitle = {European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st},
	year = {2015},
	month = {Sept},
	pages = {56-59},
	keywords = {bandwidth 10 GHz to 14.4 GHz, frequency 12 GHz, Gain, gain 22 dB, gain 9 dB to 13 dB, gain control, gain control SiGe bipolar VGA, Gain measurement, Ge-Si alloys, microwave phase shifters, Noise, phase shift variation, Phased arrays, power 83 mW, SiGe, SiGe bipolar technology, Silicon germanium, transistors, variable gain amplifier},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2015.7313827},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {6942051,
	title = {A 40-67GHz power amplifier with 13dBm PSAT and 16\% PAE in 28 nm CMOS LP},
	booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th},
	year = {2014},
	month = {Sept},
	pages = {179-182},
	keywords = {Bandwidth, CMOS analogue integrated circuits, CMOS integrated circuits, CMOS LP, differential amplifiers, efficiency 16 percent, field effect MIMIC, frequency 40 GHz to 67 GHz, Gain, Impedance, impedance matching, inductors, low-power devices, low-power electronics, millimetre wave power amplifiers, millimetre wave resonators, mm-wave PAs, neutralized common source stages, Norton transformations, output matching networks, PAE, Power generation, PSAT, size 28 nm, two-stage differential PA, wideband amplifiers, wideband inductively coupled resonators, wideband power amplifiers, wireless applications},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2014.6942051},
	author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}
}
