@article {589,
	title = {Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices},
	journal = {IEEE Transactions on Electron Devices},
	year = {2022},
	pages = {1-6},
	doi = {10.1109/TED.2022.3184622},
	author = {Modolo, N. and Santi, C. De and Baratella, G. and Bettini, A. and Borga, M. and Posthuma, N. and Bakeroot, B. and You, S. and Decoutere, S. and Bevilacqua, A. and Neviani, A. and MENEGHESSO, G. and Zanoni, E. and Meneghini, M.}
}
@conference {612,
	title = {GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse},
	booktitle = {2022 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2022},
	doi = {10.1109/IRPS48227.2022.9764510},
	author = {Chiocchetta, F. and De Santi, C. and Rampazzo, F. and Mukherjee, K. and Gr{\"u}nenp{\"u}tt, Jan and Sommer, Daniel and Blanck, Herv{\'e} and Lambert, Benoit and Gerosa, A. and MENEGHESSO, G. and Zanoni, E. and Meneghini, M.}
}
