@conference {8094533,
	title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {91-94},
	keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators},
	doi = {10.1109/ESSCIRC.2017.8094533},
	author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7313827,
	title = {A 12GHz 22dB-gain-control SiGe bipolar VGA with 2{\textdegree} phase shift variation},
	booktitle = {European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st},
	year = {2015},
	month = {Sept},
	pages = {56-59},
	keywords = {bandwidth 10 GHz to 14.4 GHz, frequency 12 GHz, Gain, gain 22 dB, gain 9 dB to 13 dB, gain control, gain control SiGe bipolar VGA, Gain measurement, Ge-Si alloys, microwave phase shifters, Noise, phase shift variation, Phased arrays, power 83 mW, SiGe, SiGe bipolar technology, Silicon germanium, transistors, variable gain amplifier},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2015.7313827},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7411748,
	title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications},
	booktitle = {2015 Asia-Pacific Microwave Conference (APMC)},
	volume = {1},
	year = {2015},
	month = {Dec},
	pages = {1-3},
	keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators},
	doi = {10.1109/APMC.2015.7411748},
	author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.}
}
@conference {6341279,
	title = {A SiGe bipolar VCO for backhaul E-band communication systems},
	booktitle = {Proceedings of the 2012 ESSCIRC},
	year = {2012},
	month = {Sept.},
	pages = {402 -405},
	keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2012.6341279},
	author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.}
}
