@conference {8094533,
	title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {91-94},
	keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators},
	doi = {10.1109/ESSCIRC.2017.8094533},
	author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7598317,
	title = {A 15.5-39GHz BiCMOS VGA with phase shift compensation for 5G mobile communication transceivers},
	booktitle = {ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference},
	year = {2016},
	month = {Sept},
	pages = {363-366},
	keywords = {5G mobile communication, 5G mobile communication transceivers, BiCMOS integrated circuits, BiCMOS VGA, Broadband amplifiers, frequency 15.5 GHz to 39 GHz, Frequency measurement, Gain, gain control, Gain measurement, inductors, microwave integrated circuits, phase shift compensation, Phased arrays, power 104 mW, radio transceivers, Wideband},
	doi = {10.1109/ESSCIRC.2016.7598317},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7411748,
	title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications},
	booktitle = {2015 Asia-Pacific Microwave Conference (APMC)},
	volume = {1},
	year = {2015},
	month = {Dec},
	pages = {1-3},
	keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators},
	doi = {10.1109/APMC.2015.7411748},
	author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.}
}
@article {4282067,
	title = {An Integrated Solution for Suppressing WLAN Signals in UWB Receivers},
	journal = {IEEE Transactions on Circuits and Systems I: Regular Papers},
	volume = {54},
	number = {8},
	year = {2007},
	pages = {1617 -1625},
	keywords = {bandwidth 4.9 GHz to 5.825 GHz, BiCMOS integrated circuit, BiCMOS integrated circuits, blocker filtering, frequency 3.6 GHz to 7.4 GHz, gain 22 dB to 19 dB, gain 5.5 dB to 8 dB, gain desensitization, interference suppression, intermodulation distortion, microwave receiver, microwave receivers, notch filter, notch filters, PCB connector, power 49.2 mW, power consumption, radio receivers, SiGe - Binary, size 0.35 micron, ultra wideband communication, ultrawide-band receiver, wireless LAN, wireless local area network transmission, WLAN signals},
	issn = {1549-8328},
	doi = {10.1109/TCSI.2007.902458},
	author = {Bevilacqua, A. and Maniero, A. and Gerosa, A. and Neviani, A.}
}
@conference {4263541,
	title = {A 0.35 um SiGe Low-Noise Amplifier for UWB, Receivers with Integrated Interferer Rejection},
	booktitle = {13th IEEE International Conference on Electronics, Circuits and Systems, 2006. ICECS {\textquoteright}06. },
	year = {2006},
	pages = {1015 -1018},
	keywords = {BiCMOS integrated circuits, BiCMOS technology, blocker altering technique, frequency 4.9 GHz to 5.825 GHz, Ge-Si alloys, integrated interferer rejection, interference suppression, low noise amplifiers, low-noise amplifier, MMIC amplifiers, PCB connectors, power 49.2 mW, radio receivers, radiofrequency interference, size 0.35 micron, ultra wideband communication, ultrawideband receivers, UWB receivers, wireless LAN, wireless local area network transmissions},
	doi = {10.1109/ICECS.2006.379963},
	author = {Bevilacqua, A. and Maniero, A. and Gerosa, A. and Neviani, A.}
}
