@conference {7870346,
	title = {A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35\% PAE},
	booktitle = {2017 IEEE International Solid-State Circuits Conference (ISSCC)},
	year = {2017},
	month = {Feb},
	pages = {232-233},
	keywords = {capacitors, Frequency measurement, power amplifiers, Power generation, Power measurement, Switches, Wireless communication},
	doi = {10.1109/ISSCC.2017.7870346},
	author = {Passamani, A and Ponton, D. and E. Thaller and Knoblinger, G. and Neviani, A. and Bevilacqua, A.}
}
@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
