@conference {700,
	title = {A 5.1{\textendash}10.5 GHz SiGe BiCMOS Power Amplifier for 6GNR with 29 dBm PSAT and 40.1\% PAE},
	booktitle = {2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)},
	year = {2025},
	keywords = {5G, 5G mobile communication, 6G, 6G mobile communication, AAS, Bandwidth, BiCMOS integrated circuits, handset, MIMO, NR, PAE, power amplifier, power amplifiers, Radio frequency, RF PA, SiGe, Silicon germanium, stacked transistors, Telephone sets, Topology, transformers, transistors},
	doi = {10.1109/SiRF63957.2025.11076751},
	author = {Pecile, Davide and Kokorovic, Stefan and Gambarucci, Alberto and Bevilacqua, A.}
}
@conference {729,
	title = {A 5-7 GHz BiCMOS Front-End Module for WiFi 6e with 2.2 dB NF and 16 dBm PAVG at -40 dB EVM},
	booktitle = {2025 20th European Microwave Integrated Circuits Conference (EuMIC)},
	year = {2025},
	keywords = {802.11ax, Access Point, BiCMOS, BiCMOS integrated circuits, Finite element analysis, Front-end, LNA, MCS11, Noise, Noise figure, PA, power amplifiers, receivers, SiGe, Silicon germanium, SPDT, Switch, Switching circuits, Wideband, WiFi 6e, Wireless fidelity, WLAN},
	doi = {10.23919/EuMIC65284.2025.11234373},
	author = {Pecile, Davide and Pollin, Andrea and Maistro, Daniele Dal and Gambarucci, Alberto and De Astis, Giuseppe and Bevilacqua, A.}
}
@article {707,
	title = {Analysis and Design of a SiGe BiCMOS PA for 6G FR3 Band With 29-dBm P SAT and 40.1\% PAE},
	journal = {IEEE Transactions on Microwave Theory and Techniques},
	year = {2025},
	pages = {1-12},
	keywords = {5G mobile communication, 6G mobile communication, BiCMOS integrated circuits, Broadband amplifier, electrothermal simulations, FR3 band, handset amplifier, heterojunction bipolar transistor (HBT), Impedance, integrated transformers, Linearity, mobile communications, monolithic microwave integrated circuit (MMIC), new radio-unlicensed (NR-U), power amplifier (PA), power amplifiers, Power generation, SiGe BiCMOS, Silicon germanium, sixth generation (6G), Telephone sets, Topology},
	doi = {10.1109/TMTT.2025.3588800},
	author = {Pecile, Davide and Gambarucci, Alberto and Kokorovic, Stefan and Bevilacqua, A.}
}
@conference {488,
	title = {A 18.2-29.3 GHz Colpitts VCOs bank with -119.5 dBc/Hz Phase Noise at 1 MHz Offset for 5G Communications},
	booktitle = {2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)},
	year = {2019},
	month = {June},
	keywords = {5G, BiCMOS, BiCMOS integrated circuits, Colpitts, phase noise, Silicon germanium, Topology, Tuning, Varactors, voltage controlled oscillators},
	author = {F. Quadrelli and F. Panazzolo and M. Tiebout and F. Padovan and M. Bassi and Bevilacqua, A.}
}
@article {465,
	title = {Class-J SiGe X-Band Power Amplifier Using a Ladder Filter-Based AM-PM Distortion Reduction Technique},
	journal = {IEEE Transactions on Circuits and Systems I: Regular Papers},
	volume = {65},
	year = {2018},
	pages = {3780 - 3789},
	keywords = {AM-PM distortion., Capacitance, class-J, Distortion, Harmonic analysis, Impedance, ladder filter, power amplifier, Power harmonic filters, SiGe, Silicon germanium, transistors, X-Band},
	issn = {1549-8328},
	doi = {10.1109/TCSI.2018.2858573},
	author = {P. Scaramuzza and C. Rubino and M. Caruso and M. Tiebout and Bevilacqua, A. and A. Neviani}
}
@conference {8094533,
	title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {91-94},
	keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators},
	doi = {10.1109/ESSCIRC.2017.8094533},
	author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7313827,
	title = {A 12GHz 22dB-gain-control SiGe bipolar VGA with 2{\textdegree} phase shift variation},
	booktitle = {European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st},
	year = {2015},
	month = {Sept},
	pages = {56-59},
	keywords = {bandwidth 10 GHz to 14.4 GHz, frequency 12 GHz, Gain, gain 22 dB, gain 9 dB to 13 dB, gain control, gain control SiGe bipolar VGA, Gain measurement, Ge-Si alloys, microwave phase shifters, Noise, phase shift variation, Phased arrays, power 83 mW, SiGe, SiGe bipolar technology, Silicon germanium, transistors, variable gain amplifier},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2015.7313827},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7411748,
	title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications},
	booktitle = {2015 Asia-Pacific Microwave Conference (APMC)},
	volume = {1},
	year = {2015},
	month = {Dec},
	pages = {1-3},
	keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators},
	doi = {10.1109/APMC.2015.7411748},
	author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.}
}
@conference {6341279,
	title = {A SiGe bipolar VCO for backhaul E-band communication systems},
	booktitle = {Proceedings of the 2012 ESSCIRC},
	year = {2012},
	month = {Sept.},
	pages = {402 -405},
	keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2012.6341279},
	author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.}
}
