@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
