@article {511,
	title = {A 39-GHz Frequency Tripler With >40-dBc Harmonic Rejection for 5G Communication Systems in 28-nm Bulk CMOS},
	journal = {IEEE Solid-State Circuits Letters},
	volume = {2},
	year = {2019},
	month = {Sep.},
	pages = {107-110},
	keywords = {5G communication systems, 5G mobile communication, Bandwidth, BiCMOS technologies, bulk CMOS technology, carrier signal generation, CMOS, CMOS analogue integrated circuits, communication systems, edge-combining concept, field effect MMIC, fifth generation (5G), frequency 39 GHz, Frequency conversion, Frequency measurement, frequency multiplier, frequency multipliers, frequency tripler, Harmonic analysis, harmonic rejection, harmonics suppression, high harmonic rejection ratio, injection locked oscillators, low phase noise, low spur level, mm-waves, MMIC frequency convertors, multipoint injection-locked ring oscillator, phase noise, power 25.0 mW, radar, Ring oscillators, robust rejection ratio, single-stage polyphase filter, size 28 nm, tripler, V, voltage 0.9 V},
	issn = {2573-9603},
	doi = {10.1109/LSSC.2019.2930198},
	author = {M. Bassi and G. Boi and F. Padovan and J. Fritzin and S. Di Martino and D. Knauder and Bevilacqua, A.}
}
@conference {7364367,
	title = {Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs},
	booktitle = {Nordic Circuits and Systems Conference (NORCAS): NORCHIP International Symposium on System-on-Chip (SoC), 2015},
	year = {2015},
	month = {Oct},
	pages = {1-4},
	keywords = {Bluetooth, Capacitance, circuit optimisation, circuit simulations, CMOS analogue integrated circuits, CMOS RF metal stack, frequency 2.4 GHz, integrated circuit design, Integrated circuit modeling, Manganese, power amplifiers, Power generation, Radio frequency, Resistance, size 28 nm, switched capacitor networks, switched capacitor power amplifier, switched-capacitor PA, Switches, third-order matching network, voltage 1.1 V},
	doi = {10.1109/NORCHIP.2015.7364367},
	author = {Passamani, A and Ponton, D. and Knoblinger, G. and Bevilacqua, A.}
}
@conference {6942051,
	title = {A 40-67GHz power amplifier with 13dBm PSAT and 16\% PAE in 28 nm CMOS LP},
	booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th},
	year = {2014},
	month = {Sept},
	pages = {179-182},
	keywords = {Bandwidth, CMOS analogue integrated circuits, CMOS integrated circuits, CMOS LP, differential amplifiers, efficiency 16 percent, field effect MIMIC, frequency 40 GHz to 67 GHz, Gain, Impedance, impedance matching, inductors, low-power devices, low-power electronics, millimetre wave power amplifiers, millimetre wave resonators, mm-wave PAs, neutralized common source stages, Norton transformations, output matching networks, PAE, Power generation, PSAT, size 28 nm, two-stage differential PA, wideband amplifiers, wideband inductively coupled resonators, wideband power amplifiers, wireless applications},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2014.6942051},
	author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}
}
@conference {6872748,
	title = {A linear model of efficiency for Switched-Capacitor RF Power-Amplifiers},
	booktitle = {2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)},
	year = {2014},
	month = {June},
	pages = {1-4},
	keywords = {back-of-the-envelope equations, C-DAC, CMOS analogue integrated circuits, CMOS integrated circuits, DPA, efficiency, Equations, Integrated circuit modeling, intrinsic power, linear model, low-power CMOS technology, Mathematical model, output stage inverter, PA, power, Radio frequency, radio-frequency switched-capacitor power amplifiers, radiofrequency power amplifiers, RF-DAC, SCPA, Semiconductor device modeling, size 28 nm, SpectreRF simulations, switched capacitor networks, Switches, target output power},
	doi = {10.1109/PRIME.2014.6872748},
	author = {Passamani, A and Ponton, D. and Knoblinger, G. and Bevilacqua, A.}
}
