@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
