@conference {6942051,
	title = {A 40-67GHz power amplifier with 13dBm PSAT and 16\% PAE in 28 nm CMOS LP},
	booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th},
	year = {2014},
	month = {Sept},
	pages = {179-182},
	keywords = {Bandwidth, CMOS analogue integrated circuits, CMOS integrated circuits, CMOS LP, differential amplifiers, efficiency 16 percent, field effect MIMIC, frequency 40 GHz to 67 GHz, Gain, Impedance, impedance matching, inductors, low-power devices, low-power electronics, millimetre wave power amplifiers, millimetre wave resonators, mm-wave PAs, neutralized common source stages, Norton transformations, output matching networks, PAE, Power generation, PSAT, size 28 nm, two-stage differential PA, wideband amplifiers, wideband inductively coupled resonators, wideband power amplifiers, wireless applications},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2014.6942051},
	author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}
}
