@conference {700,
	title = {A 5.1{\textendash}10.5 GHz SiGe BiCMOS Power Amplifier for 6GNR with 29 dBm PSAT and 40.1\% PAE},
	booktitle = {2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)},
	year = {2025},
	keywords = {5G, 5G mobile communication, 6G, 6G mobile communication, AAS, Bandwidth, BiCMOS integrated circuits, handset, MIMO, NR, PAE, power amplifier, power amplifiers, Radio frequency, RF PA, SiGe, Silicon germanium, stacked transistors, Telephone sets, Topology, transformers, transistors},
	doi = {10.1109/SiRF63957.2025.11076751},
	author = {Pecile, Davide and Kokorovic, Stefan and Gambarucci, Alberto and Bevilacqua, A.}
}
@article {707,
	title = {Analysis and Design of a SiGe BiCMOS PA for 6G FR3 Band With 29-dBm P SAT and 40.1\% PAE},
	journal = {IEEE Transactions on Microwave Theory and Techniques},
	year = {2025},
	pages = {1-12},
	keywords = {5G mobile communication, 6G mobile communication, BiCMOS integrated circuits, Broadband amplifier, electrothermal simulations, FR3 band, handset amplifier, heterojunction bipolar transistor (HBT), Impedance, integrated transformers, Linearity, mobile communications, monolithic microwave integrated circuit (MMIC), new radio-unlicensed (NR-U), power amplifier (PA), power amplifiers, Power generation, SiGe BiCMOS, Silicon germanium, sixth generation (6G), Telephone sets, Topology},
	doi = {10.1109/TMTT.2025.3588800},
	author = {Pecile, Davide and Gambarucci, Alberto and Kokorovic, Stefan and Bevilacqua, A.}
}
