@conference {8094533,
	title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {91-94},
	keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators},
	doi = {10.1109/ESSCIRC.2017.8094533},
	author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7313827,
	title = {A 12GHz 22dB-gain-control SiGe bipolar VGA with 2{\textdegree} phase shift variation},
	booktitle = {European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st},
	year = {2015},
	month = {Sept},
	pages = {56-59},
	keywords = {bandwidth 10 GHz to 14.4 GHz, frequency 12 GHz, Gain, gain 22 dB, gain 9 dB to 13 dB, gain control, gain control SiGe bipolar VGA, Gain measurement, Ge-Si alloys, microwave phase shifters, Noise, phase shift variation, Phased arrays, power 83 mW, SiGe, SiGe bipolar technology, Silicon germanium, transistors, variable gain amplifier},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2015.7313827},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7411748,
	title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications},
	booktitle = {2015 Asia-Pacific Microwave Conference (APMC)},
	volume = {1},
	year = {2015},
	month = {Dec},
	pages = {1-3},
	keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators},
	doi = {10.1109/APMC.2015.7411748},
	author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.}
}
@conference {6341279,
	title = {A SiGe bipolar VCO for backhaul E-band communication systems},
	booktitle = {Proceedings of the 2012 ESSCIRC},
	year = {2012},
	month = {Sept.},
	pages = {402 -405},
	keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2012.6341279},
	author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.}
}
