@conference {8094533,
	title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {91-94},
	keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators},
	doi = {10.1109/ESSCIRC.2017.8094533},
	author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {8094557,
	title = {Class-AB and class-J 22 dBm SiGe HBT PAs for X-band radar systems},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {187-190},
	keywords = {Attenuation, class-AB SiGe HBT PA, class-J SiGe HBT PA, differential circuit, efficiency 31 percent, Electronics packaging, Gain, gain 20 dB, Ge-Si alloys, Heterojunction bipolar transistors, input matching network, integrated transformers, microwave bipolar transistors, microwave power amplifiers, PA core, PGA core, phased array, phased array radar, power amplifier, Power generation, Power measurement, programable gain amplifier, radar, SiGe, Silicon germanium, word length 8 bit, X-band phased array radar},
	doi = {10.1109/ESSCIRC.2017.8094557},
	author = {P. Scaramuzza and C. Rubino and Tiebout, M. and Caruso, M. and M. Ortner and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7598317,
	title = {A 15.5-39GHz BiCMOS VGA with phase shift compensation for 5G mobile communication transceivers},
	booktitle = {ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference},
	year = {2016},
	month = {Sept},
	pages = {363-366},
	keywords = {5G mobile communication, 5G mobile communication transceivers, BiCMOS integrated circuits, BiCMOS VGA, Broadband amplifiers, frequency 15.5 GHz to 39 GHz, Frequency measurement, Gain, gain control, Gain measurement, inductors, microwave integrated circuits, phase shift compensation, Phased arrays, power 104 mW, radio transceivers, Wideband},
	doi = {10.1109/ESSCIRC.2016.7598317},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7313827,
	title = {A 12GHz 22dB-gain-control SiGe bipolar VGA with 2{\textdegree} phase shift variation},
	booktitle = {European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st},
	year = {2015},
	month = {Sept},
	pages = {56-59},
	keywords = {bandwidth 10 GHz to 14.4 GHz, frequency 12 GHz, Gain, gain 22 dB, gain 9 dB to 13 dB, gain control, gain control SiGe bipolar VGA, Gain measurement, Ge-Si alloys, microwave phase shifters, Noise, phase shift variation, Phased arrays, power 83 mW, SiGe, SiGe bipolar technology, Silicon germanium, transistors, variable gain amplifier},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2015.7313827},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@article {6951466,
	title = {Design of Low-Noise K -Band SiGe Bipolar VCOs: Theory and Implementation},
	journal = {IEEE Transactions on Circuits and Systems I: Regular Papers},
	volume = {62},
	number = {2},
	year = {2015},
	month = {Feb},
	pages = {607-615},
	keywords = {$K$-band, Backhaul communications, bipolar transistor, Capacitance, phase noise, Q-factor, Tuning, Varactors, voltage controlled oscillator, voltage-controlled oscillators},
	issn = {1549-8328},
	doi = {10.1109/TCSI.2014.2364100},
	author = {Padovan, F. and Tiebout, M. and Mertens, K.L.R. and Bevilacqua, A. and Neviani, A.}
}
@conference {7411748,
	title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications},
	booktitle = {2015 Asia-Pacific Microwave Conference (APMC)},
	volume = {1},
	year = {2015},
	month = {Dec},
	pages = {1-3},
	keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators},
	doi = {10.1109/APMC.2015.7411748},
	author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.}
}
@conference {6341279,
	title = {A SiGe bipolar VCO for backhaul E-band communication systems},
	booktitle = {Proceedings of the 2012 ESSCIRC},
	year = {2012},
	month = {Sept.},
	pages = {402 -405},
	keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2012.6341279},
	author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.}
}
@article {6157641,
	title = {A X-Band I/Q Upconverter in 65 nm CMOS for High Resolution FMCW Radars},
	journal = {IEEE Microwave and Wireless Components Letters},
	volume = {22},
	number = {3},
	year = {2012},
	month = {march},
	pages = {141 -143},
	issn = {1531-1309},
	doi = {10.1109/LMWC.2012.2184275},
	author = {Camponeschi, M. and Bevilacqua, A. and Tiebout, M. and Neviani, A.}
}
@article {5492325,
	title = {A 0.06 mm2 11 mW Local Oscillator for the GSM Standard in 65 nm CMOS},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {45},
	number = {7},
	year = {2010},
	pages = {1295 -1304},
	keywords = {cellular radio, CMOS integrated circuits, CMOS process, current 9 mA, divide-by-four injection-locked frequency divider, frequency 13 GHz to 15 GHz, frequency 3 MHz, frequency dividers, GSM standard, LC VCO, local oscillator, MMIC oscillators, network topology, ring oscillator-based topology, size 65 nm, thin-oxide devices, voltage 1.2 V, voltage-controlled oscillators},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2010.2049457},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Da Dalt, N. and Gerosa, A. and Neviani, A.}
}
@article {5481990,
	title = {An Integrated Divide-by-Two Direct Injection-Locking Frequency Divider for Bands S Through Ku},
	journal = {IEEE Transactions on Microwave Theory and Techniques},
	volume = {58},
	number = {7},
	year = {2010},
	pages = {1686 -1695},
	issn = {0018-9480},
	doi = {10.1109/TMTT.2010.2049680},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Da Dalt, N. and Gerosa, A. and Neviani, A.}
}
@conference {5326029,
	title = {A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS},
	booktitle = {Proceedings of ESSCIRC 2009},
	year = {2009},
	pages = {444 -447},
	keywords = {cellular radio, CMOS, CMOS integrated circuits, current 9 mA, divide-by-four injection-locked frequency divider, frequency 13 GHz to 15 GHz, frequency 3 MHz, frequency dividers, GSM-compliant local oscillator, LC VCO, microwave oscillators, power 10.8 mW, ring oscillator-based topology, size 65 nm, thin-oxide devices, voltage 1.2 V, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2009.5326029},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Da Dalt, N. and Gerosa, A. and Neviani, A.}
}
@article {4768866,
	title = {Analysis and Design of an Integrated Notch Filter for the Rejection of Interference in UWB Systems},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {44},
	number = {2},
	year = {2009},
	pages = {331 -343},
	keywords = {automatic tuning, CMOS fourth-order notch filter, filter calibration, frequency 5 GHz to 6 GHz, frequency 900 MHz, integrated notch filter, interference rejection, interference suppression, low noise amplifiers, low-noise amplifier, low-noise filter, notch filters, out-of-band blocker, power 32 mW, size 0.13 mum, ultra wideband communication, UWB systems},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2008.2010984},
	author = {Vallese, A. and Bevilacqua, A. and Sandner, C. and Tiebout, M. and Gerosa, A. and Neviani, A.}
}
@conference {4653277,
	title = {A 6-9-GHz programmable gain LNA with integrated balun in 90-nm CMOS},
	booktitle = {IEEE International Conference on Ultra-Wideband, 2008. ICUWB 2008. },
	volume = {1},
	year = {2008},
	pages = {25 -28},
	keywords = {baluns, CMOS digital integrated circuits, Europe, field effect MMIC, frequency 4.5 GHz to 11 GHz, frequency 6 GHz to 9 GHz, gain 12.5 dB, integrated balun, Japan, low noise amplifiers, low-noise amplifier, microwave amplifiers, noise figure 3.9 dB to 5.1 dB, programmable gain LNA, pure digital CMOS technology, size 90 nm, ultra wideband communication, ultrawideband communications, USA, UWB communications},
	doi = {10.1109/ICUWB.2008.4653277},
	author = {Bevilacqua, A. and Sandner, C. and Tiebout, M. and Gerosa, A. and Neviani, A.}
}
@conference {4541664,
	title = {Design of broadband inductorless LNAs in ultra-scaled CMOS technologies},
	booktitle = {IEEE International Symposium on Circuits and Systems, 2008. ISCAS 2008. },
	year = {2008},
	pages = {1300 -1303},
	keywords = {bandwidth 10 GHz, broadband inductorless LNA, CMOS integrated circuits, feedback, gain 18 dB, integrated circuit design, low noise amplifiers, power 32 mW, shunt-shunt resistive feedback, size 45 nm, ultra-scaled CMOS technology, voltage 1 V, wideband amplifiers},
	doi = {10.1109/ISCAS.2008.4541664},
	author = {Bevilacqua, A. and Camponeschi, M. and Tiebout, M. and Gerosa, A. and Neviani, A.}
}
@conference {4523088,
	title = {UWB Fast-Hopping Frequency Generation Based on Sub-Harmonic Injection Locking},
	booktitle = {Digest of Technical Papers of 2008 IEEE International Solid-State Circuits Conference},
	year = {2008},
	pages = {124 -601},
	keywords = {90nm CMOS, CMOS integrated circuits, frequency hop communication, harmonic oscillators (circuits), injection locked oscillators, LO generation, optical frequency conversion, size 90 nm, subharmonic injection locking, ultra wideband technology, UWB fast-hopping frequency generation},
	doi = {10.1109/ISSCC.2008.4523088},
	author = {Toso, S.D. and Bevilacqua, A. and Tiebout, M. and Marsili, S. and Sandner, C. and Gerosa, A. and Neviani, A.}
}
@article {4684650,
	title = {UWB Fast-Hopping Frequency Generation Based on Sub-Harmonic Injection Locking},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {43},
	number = {12},
	year = {2008},
	pages = {2844 -2852},
	keywords = {CMOS integrated circuits, CMOS prototype synthesizes, current 30 mA, fast hopping carriers, frequency 8.71 GHz, frequency hop communication, frequency synthesizers, size 90 nm, sub harmonic injection locking, ultra wideband communication, UWB fast hopping frequency generation, voltage 1.2 V, WiMedia},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2008.2005702},
	author = {Dal Toso, S. and Bevilacqua, A. and Tiebout, M. and Marsili, S. and Sandner, C. and Gerosa, A. and Neviani, A.}
}
@conference {4242444,
	title = {A 0.13 um CMOS LNA with Integrated Balun and Notch Filter for 3-to-5GHz UWB Receivers},
	booktitle = {Digest of Technical Papers of 2007 IEEE International Solid-State Circuits Conference},
	year = {2007},
	pages = {420 -612},
	keywords = {0.13 micron, 19.4 dB, 24 mW, 3 to 5 GHz, 7.5 mW, baluns, CMOS analogue integrated circuits, CMOS LNA, integrated balun, integrated notch filter, ISM band, low noise amplifiers, microwave integrated circuits, microwave receivers, notch filters, radio receivers, ultra wideband technology, UNII band, UWB receivers, WLAN blockers},
	issn = {0193-6530},
	doi = {10.1109/ISSCC.2007.373473},
	author = {Bevilacqua, A. and Vallese, A. and Sandner, C. and Tiebout, M. and Gerosa, A. and Neviani, A.}
}
@conference {4430265,
	title = {An analog front-end with integrated notch filter for 3-5 GHz UWB receivers in 0.13 um CMOS},
	booktitle = {Proc. of IEEE 2007 European Solid State Circuits Conference},
	year = {2007},
	pages = {139 -142},
	keywords = {analog front-end, automatic tuning, CMOS, CMOS analogue integrated circuits, current 20 mA, frequency 3 GHz to 5 GHz, integrated notch filter, microwave filters, MMIC, notch filters, out-of-band blockers, power consumption penalty, radio receivers, size 0.13 mum, ultra wideband communication, UWB receivers, voltage 1.5 V},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2007.4430265},
	author = {Vallese, A. and Bevilacqua, A. and Sandner, C. and Tiebout, M. and Gerosa, A. and Neviani, A.}
}
