@conference {575,
	title = {A 22{\textendash}31 GHz Bidirectional 5G Transceiver Front-End in 28 nm CMOS},
	booktitle = {ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)},
	year = {2021},
	doi = {10.1109/ESSCIRC53450.2021.9567832},
	author = {Manente, D. and Quadrelli, F. and Padovan, F. and Bassi, M. and Mazzanti, A. and Bevilacqua, A.}
}
@conference {8094533,
	title = {A 21GHz 20.5\%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset},
	booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference},
	year = {2017},
	month = {Sept},
	pages = {91-94},
	keywords = {BiCMOS integrated circuits, bipolar MMIC, current 17.5 mA, frequency 1 MHz, frequency 18.8 GHz to 23.1 GHz, Ge-Si alloys, microwave oscillators, oscillator figure-of-merit, phase noise, SiGe, SiGe BiCMOS Colpitts VCO, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, very low phase noise, voltage 4 V, voltage controlled oscillator, voltage-controlled oscillators},
	doi = {10.1109/ESSCIRC.2017.8094533},
	author = {F. Boscolo and Padovan, F. and F. Quadrelli and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@article {7469807,
	title = {A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2{\textdegree} Phase-Shift Variation},
	journal = {IEEE Journal of Solid-State Circuits},
	volume = {51},
	number = {7},
	year = {2016},
	month = {July},
	pages = {1525-1536},
	keywords = {Antenna radiation patterns, Array signal processing, compensation circuitry, frequency 12 GHz, Gain, gain 22 dB, gain control, gain-control bipolar VGA, Ge-Si alloys, input-output phase shift sensitivity to gain variations, linear-in-dB gain control feature, Linear-in-decibel (linear-in-dB) gain control, linear-in-decibel gain control, microwave amplifiers, noise figure 5.1 dB, phase-shift compensation, phased array, phased array system, Phased arrays, power 83 mW, semiconductor materials, SiGe, SiGe bipolar technology, signal phase-amplitude control, Silicon germanium, ultra-low sidelobe phased arrays, variable gain amplifier, variable gain amplifier (VGA)},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2016.2551749},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@conference {7598317,
	title = {A 15.5-39GHz BiCMOS VGA with phase shift compensation for 5G mobile communication transceivers},
	booktitle = {ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference},
	year = {2016},
	month = {Sept},
	pages = {363-366},
	keywords = {5G mobile communication, 5G mobile communication transceivers, BiCMOS integrated circuits, BiCMOS VGA, Broadband amplifiers, frequency 15.5 GHz to 39 GHz, Frequency measurement, Gain, gain control, Gain measurement, inductors, microwave integrated circuits, phase shift compensation, Phased arrays, power 104 mW, radio transceivers, Wideband},
	doi = {10.1109/ESSCIRC.2016.7598317},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@article {7410026,
	title = {A 64-Channel 965-uW Neural Recording SoC With UWB Wireless Transmission in 130-nm CMOS},
	journal = {IEEE Transactions on Circuits and Systems II: Express Briefs},
	volume = {63},
	number = {6},
	year = {2016},
	month = {June},
	pages = {528-532},
	keywords = {64-channel neural recording SoC, analog front end, Analog-digital conversion, Bandwidth, biomedical electronics, biomedical telemetry, bit rate 20 Mbit/s, BMI, Brain???machine interface (BMI), capacitors, CMOS digital integrated circuits, CMOS process, efficiency 11.7 percent, Electronics packaging, implantable electronics, inputreferred noise, low-noise bandpass amplifier, noise efficiency factor, power 965 muW, Power demand, pulse position modulation, pulse-position modulation ultrawideband transmitter, radiotelemetry, raw neural signal, SAR analog-to-digital converter, size 130 nm, system-on-chip, transmitters, ultra wideband communication, ultra-wideband (UWB), ultrawideband (UWB), UWB wireless transmission, voltage 0.5 V, voltage 5.6 V, Wireless communication, wireless neural recording systems, wireless telemetry, word length 10 bit},
	issn = {1549-7747},
	doi = {10.1109/TCSII.2016.2530882},
	author = {S. Brenna and Padovan, F. and Neviani, A. and Bevilacqua, A. and A. Bonfanti and A. L. Lacaita}
}
@conference {7313827,
	title = {A 12GHz 22dB-gain-control SiGe bipolar VGA with 2{\textdegree} phase shift variation},
	booktitle = {European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st},
	year = {2015},
	month = {Sept},
	pages = {56-59},
	keywords = {bandwidth 10 GHz to 14.4 GHz, frequency 12 GHz, Gain, gain 22 dB, gain 9 dB to 13 dB, gain control, gain control SiGe bipolar VGA, Gain measurement, Ge-Si alloys, microwave phase shifters, Noise, phase shift variation, Phased arrays, power 83 mW, SiGe, SiGe bipolar technology, Silicon germanium, transistors, variable gain amplifier},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2015.7313827},
	author = {Padovan, F. and Tiebout, M. and Neviani, A. and Bevilacqua, A.}
}
@article {6951466,
	title = {Design of Low-Noise K -Band SiGe Bipolar VCOs: Theory and Implementation},
	journal = {IEEE Transactions on Circuits and Systems I: Regular Papers},
	volume = {62},
	number = {2},
	year = {2015},
	month = {Feb},
	pages = {607-615},
	keywords = {$K$-band, Backhaul communications, bipolar transistor, Capacitance, phase noise, Q-factor, Tuning, Varactors, voltage controlled oscillator, voltage-controlled oscillators},
	issn = {1549-8328},
	doi = {10.1109/TCSI.2014.2364100},
	author = {Padovan, F. and Tiebout, M. and Mertens, K.L.R. and Bevilacqua, A. and Neviani, A.}
}
@conference {7411748,
	title = {SiGe BiCMOS VCO with 27\% tuning range for 5G communications},
	booktitle = {2015 Asia-Pacific Microwave Conference (APMC)},
	volume = {1},
	year = {2015},
	month = {Dec},
	pages = {1-3},
	keywords = {5G communications, 5G mobile communication, BiCMOS integrated circuits, BiCMOS VCO, current 8 mA, frequency 12 GHz to 15.9 GHz, Frequency measurement, Ge-Si alloys, Heterojunction bipolar transistors, microwave oscillators, oscillator core, phase noise, SiGe, Silicon germanium, transformer-coupled varactor, Tuning, Varactors, voltage 3.3 V, voltage-controlled oscillators},
	doi = {10.1109/APMC.2015.7411748},
	author = {Padovan, F. and Tiebout, M. and F. Dielacher and Bevilacqua, A. and Neviani, A.}
}
@conference {6942078,
	title = {A 20Mb/s, 2.76 pJ/b UWB impulse radio TX with 11.7\% efficiency in 130 nm CMOS},
	booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th},
	year = {2014},
	month = {Sept},
	pages = {287-290},
	keywords = {antenna, Antennas, Bandwidth, bit rate 20 Mbit/s, CMOS integrated circuits, CMOS technology, digitally controlled oscillator, efficiency 11.7 percent, energy conservation, frequency 7.25 GHz to 8.5 GHz, low-voltage supply, microwave antennas, microwave oscillators, operation efficiency, oscillators, overall energy efficiency, PPM-modulated pulses, radio transmitters, size 130 nm, supporting communication ranges, ultra wideband communication, ultralow energy neural recording applications, UWB impulse radio transmitter, UWB impulse radio TX, voltage 0.5 V, Wireless communication},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2014.6942078},
	author = {Padovan, F. and Bevilacqua, A. and Neviani, A.}
}
@conference {6341279,
	title = {A SiGe bipolar VCO for backhaul E-band communication systems},
	booktitle = {Proceedings of the 2012 ESSCIRC},
	year = {2012},
	month = {Sept.},
	pages = {402 -405},
	keywords = {backhaul E-band communication system, bipolar integrated circuits, frequency 18.9 GHz to 22.1 GHz, Frequency measurement, frequency multiplier, Ge-Si alloys, K-band, K-band SiGe bipolar VCO, microwave oscillators, phase noise, SiGe, Silicon germanium, Tuning, voltage-controlled oscillators},
	issn = {1930-8833},
	doi = {10.1109/ESSCIRC.2012.6341279},
	author = {Padovan, F. and Tiebout, M. and Mertens, K. and Bevilacqua, A. and Neviani, A.}
}
